Semiconductor Electronics: Materials, Devices and Simple Circuits MCQ Questions Class 12 Physics Chapter 14
NCERT MCQ Questions for Class 12 Physics Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits. Semiconductor Electronics: Materials, Devices and Simple Circuits MCQ Questions with Answers from Class 12 Physics.
Semiconductor Electronics: Materials, Devices and Simple Circuits MCQ Questions Class 12 Physics Chapter 14
Semiconductor Electronics: Materials, Devices and Simple Circuits Multiple Choice Questions with Answers Class 12 Physics Chapter 14 PDF is available.
1) The solids which possess very low resistivity or high conductivity are called as
a) Metals
b) Conductors
c) Insulators
d) Both a and b
Ans: d) both a and b
2) The SI unit of conductivity is
a) Sm
b) Sm-1
c) S
d) M
Ans: b) Sm-1
3) The SI unit of resistivity is
a) Ohm
b) Ohm m
c) Ohm m-1
d) Mho
Ans: b) ohm m
4) The reciprocal of conductivity is called as
a) Resistance
b) Conductance
c) Resistivity
d) Conductivity
Ans: c) resistivity
5) The range of conductivity for metals is
a) 102 – 10-8 Sm-1
b) 102 – 108 Sm-1
c) 10-2 – 10-8 Sm-1
d) 10-2 – 108 Sm-1
Ans: b) 102 – 108 Sm-1
6) The range of resistivity 10-2 – 10-8 ohm m is for
a) Metals
b) Semiconductors
c) Insulators
d) None
Ans: a) metals
7) The solids having resistivity or conductivity in between metals and insulators are called as
a) Superconductors
b) Semiconductor
c) Conductors
d) Insulators
Ans: b) semiconductor
8) The range of conductivity 105 – 10-6 Sm-1 is for
a) Insulators
b) Semiconductor
c) Metals
d) Conductors
Ans: b) semiconductors
9) The range of resistivity 10-5 to 106 ohm m is for
a) Insulators
b) Conductors
c) Semiconductor
d) Metals
Ans: d) metals
10) The solids having high resistivity or low conductivity are called as
a) Insulators
b) Semiconductors
c) Conductors
d) Superconductors
Ans: a) insulators
11) The range of conductivity 10-11 – 10-19Sm-1 is for
a) Insulators
b) Semiconductor
c) Superconductors
d) Metals
Ans: a) insulators
12) The range of resistivity 1011 – 1019 ohm m is for
a) Resistors
b) Insulators
c) Semiconductor
d) Superconductors
Ans: b) insulators
13) Si and Ge are called as
a) Superconductors
b) Semiconductor
c) Elemental semiconductor
d) Compound semiconductor
Ans: c) elemental semiconductor
14) CdS, GaAs, CdSe all are the
a) Superconductors
b) Semiconductor
c) Elemental semiconductor
d) Compound semiconductor
Ans: d) compound semiconductor
15) The different energy levels with continuous energy variation form are called as
a) Energy levels
b) Energy bands
c) Energy gaps
d) Band gap
Ans: b) energy bands
16) The energy band which includes the energy levels of the Valence electrons is called as
a) Energy band
b) Valence band
c) Conduction band
d) None
Ans: b) Valence band
17) The energy band above the Valence band is called as
a) Energy band
b) Conduction band
c) Valence band
d) None
Ans: c) Valence band
18) When conduction band overlaps with the Valence band then electrons can freely move into it, then such solids are called as
a) Insulators
b) Superconductors
c) Semiconductor
d) Conductors
Ans: d) conductors
19) If there is some gap between conduction band and Valence band, electrons in the Valence band all remains bound and no free electrons are available, such solids are called as
a) Semiconductor
b) Conductors
c) Insulators
d) Metals
Ans: c) insulators
20) In case of conductors
a) Valence band and conduction band are not overlapping
b) Valence band and conduction band has energy gap
c) Valence band and conduction bands are overlapping
d) Both b and c
Ans: c) Valence band and conduction band are overlapping
21) In case of insulators
a) Valence band and conduction bands overlaps
b) Valence band and conduction band has some gap
c) Both a and b
d) None
Ans: b) Valence band and conduction band has some gap
22) The gap between top of the Valence band and bottom of the conduction band is called as
a) Energy gap
b) Energy difference
c) Energy band gap
d) None
Ans: c) energy band gap
23) If there is a very small energy band gap or zero energy band gap then the solids are called as
a) Insulators
b) Conductors
c) Metals
d) Both b and c
Ans: d) both b and c
24) If the energy band gap is more than 3eV then the solids are called as
a) Semiconductor
b) Insulators
c) Conductors
d) Metals
Ans: b) insulators
25) If the energy band gap is less than 3eV then the solids are called as
a) Semiconductor
b) Insulators
c) Metals
d) Conductors
Ans: a) semiconductor
26) The pure semiconductor are called as
a) Intrinsic semiconductor
b) Extrinsic semiconductor
c) Both a and b
d) Semiconductor
Ans: a) intrinsic semiconductor
27) The intrinsic semiconductor behaves like _____ at T= 0K
a) Semiconductor
b) Insulators
c) Conductors
d) Metals
Ans: b) insulators
28) The impurity added semiconductor are called as
a) Intrinsic semiconductor
b) Extrinsic semiconductor
c) Impurity semiconductor
d) Both b and c
Ans: d) both b and c
29) The deliberate addition of a desirable impurity is called as
a) Imputation
b) Doping
c) Adding
d) None
Ans: b) doping
30) The impurity atoms added in doping are called as
a) Impure atoms
b) Dopants
c) Both a and b
d) None
Ans: b) dopants
31) The semiconductor in which impurity is added are also called as
a) Extrinsic semiconductor
b) Impurity semiconductor
c) Doped semiconductor
d) All
Ans: d) all
32) When pentavalent impurity are added to a intrinsic semiconductor then semiconductor formed are called as
a) P type semiconductor
b) N type semiconductor
c) Both a and b
d) None
Ans: b) n type semiconductor
33) The pentavalent impurity are called as
a) Acceptor impurity
b) Donor impurity
c) Both a and b
d) None
Ans: b) donor impurity
34) In case of extrinsic semiconductor doped with pentavalent impurity the majority charge carriers are
a) Electrons
b) Holes
c) Both a and b
d) None
Ans: a) electrons
35) In case of extrinsic semiconductor doped with pentavalent impurity the minority charge carriers are
a) Electrons
b) Holes
c) Both a and b
d) None
Ans: b) holes
36) Al, B and In are the
a) Pentavalent impurity
b) Trivalent impurity
c) Tetravalent impurity
d) None
Ans: b) trivalent impurity
37) When trivalent impurity are added to intrinsic semiconductor then the semiconductor formed are called as
a) P type semiconductor
b) N type semiconductor
c) Both a and b
d) None
Ans: a) p type semiconductor
38) The trivalent impurity are called as
a) Acceptor impurity
b) Donor impurity
c) Both a and b
d) None
Ans: a) acceptor impurity
39) In case of extrinsic semiconductor doped with trivalent impurity the majority charge carriers are
a) Electrons
b) Holes
c) Both a and b
d) None
Ans: b) holes
40) In case of extrinsic semiconductor doped with trivalent impurity the minority charge carriers are
a) Electrons
b) Holes
c) Both a and b
d) None
Ans: a) electrons
41) For n type semiconductor
a) Number of holes > number of electrons
b) Number of electrons < number of holes
c) Number of electrons > number of holes
d) None
Ans: c) number of electrons > number of holes
- In case you have missed:- Previous Chapter MCQ Questions
42) For p type semiconductor
a) Number of holes < number of electrons
b) Number of holes > number of electrons
c) Number of electrons > number of holes
d) None
Ans: b) number of holes > number of electrons
43) A p n junction is the basic building block of the semiconductor devices like
a) Diodes
b) Transistors
c) Both a and b
d) None
Ans: c) both a and b
44) Which of the two processes occurs during the formation of p n junction
a) Diffusion
b) Drift
c) Both a and b
d) None
Ans: c) both a and b
45) The motion of charge carriers due to electric field is called as
a) Diffusion
b) Draft
c) Drift
d) None
Ans: c) drift
46) Drift current is in the ____
a) Direction of diffusion current
b) Opposite direction of diffusion current
c) Both a and b
d) None
Ans: b) opposite direction of the diffusion current
47) The potential which tends to prevent the movement of electrons from the n region to p region is called as
a) Depletion potential
b) Barrier potential
c) Zero potential
d) None
Ans: b) barrier potential
48) When p side is connected to positive terminal of battery and n side is connected to negative terminal of battery then the bias of the semiconductor is called as
a) Reverse bias
b) Forward bias
c) Both a and b
d) None
Ans: b) forward bias
49) The total diode forward current is the
a) Hole diffusion current
b) Conventional current
c) Sum of hole diffusion current and conventional current due to electron diffusion
d) None
Ans: c) sum of hole diffusion current and conventional current due to electron diffusion
50) The current flowing in case of forward bias is in
a) Ampere’s
b) Milliamp
c) Microamp
d) None
Ans: b) milliamp
51) When an external voltage is applied such that n side is positive and p side is negative then diode is said to be in
a) Forward bias mode
b) Reverse bias mode
c) Both a and b
d) None
Ans: b) reverse bias mode
52) After characteristic voltage the diode current increases exponentially even for a very small increase in the diode bias voltage then this voltage is called as
a) Threshold voltage
b) Cut in voltage
c) Both a and b
d) None
Ans: c) both a and b
53) For germanium diode the cut in voltage is
a) -0.2 V
b) 0.2 V
c) 2 V
d) 20V
Ans: b) 0.2 V
54) For Si diode the cut in voltage is
a) -0.7V
b) 7V
c) 0.7 V
d) 70V
Ans: c) 0.7 V
55) For the diode in reverse bias, the current is very small and almost remains constant with change in bias, the current is called as
a) Saturation current
b) Reverse saturation current
c) Conventional current
d) Diffusion current
Ans: b) reverse saturation current
56) The ratio of small change in voltage to small change in current is called as
a) Resistance
b) Dynamic resistance
c) Small resistance
d) None
Ans: b) dynamic resistance
57) The property used to rectify alternating voltage and the circuit used for this purpose is called
a) Transducer
b) Transformers
c) Transistors
d) Rectifier
Ans: d) rectifier
58) When a pulsating voltage will appear across the load only during the half cycle of the AC input during which the diode is in forward bias, then it is called as
a) Full wave rectifier
b) Half wave rectifier
c) Both a and b
d) None
Ans: b) half wave rectifier
59) The additional circuits appear to filter out the AC ripple and give a pure a pure DC voltage so they are called as
a) Purifiers
b) Rectifier
c) Filters
d) None
Ans: c) filters
60) The product of capacitance C and the effective resistance RL used in the circuit is called as
a) Voltage constant
b) Time constant
c) Both a and b
d) None
Ans: b) time constant
61) The diode which is designed to operate under reverse bias in the breakdown region is called as
a) P n junction diode
b) Zener diode
c) Rectifier
d) None
Ans: b) zener diode
62) Zener diode is used as
a) Voltage stabilizer
b) Voltage regulator
c) Current regulator
d) None
Ans: b) voltage regulator
63) Zener diode is operated in
a) Forward bias
b) Reverse bias
c) Both a and b
d) None
Ans: b) reverse bias
64) Semiconductor diodes in which carriers are generated by photons, such devices are called as
a) Electronic devices
b) Photoelectric devices
c) Optoelectronic devices
d) None
Ans: c) optoelectronic devices
65) The photodiodes used for detecting optical signals are called as
a) Photodiodes
b) Optoelectronic devices
c) Photocell
d) Photodetectors
Ans: d) photodetectors
66) The diodes which converts electrical energy into light are called as
a) Photocell
b) Photodiode
c) Light emitting diode
d) None
Ans: c) light emitting diode
67) Light emitting diode converts electrical energy into
a) Chemical energy
b) Nuclear energy
c) Thermal energy
d) Light
Ans: d) light
68) The photovoltaic devices which convert optical radiation into electricity are called as
a) Photocells
b) Solar cells
c) Diodes
d) LED
Ans: b) solar cells
69) Photodiode is operated under
a) Reverse bias
b) Forward bias
c) Both a and b
d) None
Ans: a) reverse bias
70) Light emitting diode is operated under
a) Reverse bias
b) Forward bias
c) Both a and b
d) None
Ans: b) forward bias
71) Solar cell works on the principal of
a) Photoelectric effect
b) Photovoltaic effect
c) Both a and b
d) None
Ans: b) photovoltaic effect
72) A binary number has two digits which are
a) 0 and 1
b) 0 and -1
c) 1 and -1
d) 1 and 2
Ans: a) 0 and 1
73) Logic gates are used in
a) Calculators
b) Digital watches
c) Computers
d) All
Ans: d) all
74) A gate is a digital circuit which follows certain logical relationship between input and output voltage such gates are called as
a) Digital gates
b) Diode gates
c) Logic gates
d) None
Ans: c) logic gates
75) The gate which produces a 1 output if the input is 0 and vice versa, it is called as
a) NOR gate
b) NAND gate
c) NOT gate
d) None
Ans: c) NOT gate
76) NOT gate is also called as
a) Rectifier
b) Reversed
c) Inverter
d) None
Ans: c) Inverter
77) The gate which can be used to modify the pulse waveform is called as
a) NOT gate
b) AND gate
c) OR gate
d) None
Ans: c) OR gate
78) The AND gate filled by the NOT gate is called as
a) NOR gate
b) NAND gate
c) AND gate
d) None
Ans: b) NAND gate
79) NAND gate is also called as
a) Inverter
b) Reversed
c) Universal gate
d) None
Ans: c) universal gate
80) A NOT operation applied after OR gate gives
a) NAND gate
b) NOR gate
c) OR gate
d) None
Ans: b) NOR gate
81) NOR gate is also considered as
a) Reversal gate
b) Inverter
c) Universal gate
d) None
Ans: c) universal gate
- In case you have missed:- NCERT MCQ Questions for Electric Charges and Fields
