Difference between Electron rich and electron deficient impurities
Difference between Electron rich impurities and electron deficient impurities are in tabular form below –
Electron rich impurities |
electron deficient impurities |
In a periodic table silicon and germanium belong to group 14 with four valence electrons each. | Silicon or germanium of group 14 can also be doped with elements of group 13 elements like B, Al or Ga which contain only three valence electrons. |
Electron rich impurities doped with group 1s elements like P or As, which contain five valence electrons. | Electron deficient impurities doped with group 13 elements like B or Al which contain three valence electrons. |
They occupy some spaces of the lattice sites in the silicon or germanium crystal. | They occupy some lattice sites in Boron or silicon crystal. |
Four out of five electrons are used in the formation of four covalent bonds with the four neighboring silicon atoms, the fifth electron in P is extra and becomes decolonized. | The fourth electron is SP is extra that remains isolated and create an electron hole or electron vacancy. |
In the presence of an electron field this mobile electron moves from negative to positive terminal and increases the conductivity of silicon. | The movement of electrons and the hole increase the conductivity of Si electrons moving negative to positive, while the remaining hole would move in the opposite direction. |
Increased conductivity of Si or Ge is due to negatively charged mobile electrons, the Si Doped with electron rich impurities become a N-type Semiconductor. | Semiconductors like Si doped with electron detect or electron rich impurities are called p – type semiconductors. |