Difference between Electron rich impurities and electron deficient impurities

Difference between Electron rich and electron deficient impurities

Difference between Electron rich impurities and electron deficient impurities are in tabular form below –

Electron rich impurities

electron deficient impurities

In a periodic table silicon and germanium belong to group 14 with four valence electrons each. Silicon or germanium of group 14 can also be doped with elements of group 13 elements like B, Al or Ga which contain only three valence electrons.
Electron rich impurities doped with group 1s elements like P or As, which contain five valence electrons. Electron deficient impurities doped with group 13 elements like B or Al which contain three valence electrons.
They occupy some spaces of the lattice sites in the silicon or germanium crystal. They occupy some lattice sites in Boron or silicon crystal.
Four out of five electrons are used in the formation of four covalent bonds with the four neighboring silicon atoms, the fifth electron in P is extra and becomes decolonized. The fourth electron is SP is extra that remains isolated and create an electron hole or electron vacancy.
In the presence of an electron field this mobile electron moves from negative to positive terminal and increases the conductivity of silicon. The movement of electrons and the hole increase the conductivity of Si electrons moving negative to positive, while the remaining hole would move in the opposite direction.
Increased conductivity of Si or Ge is due to negatively charged mobile electrons, the Si Doped with electron rich impurities become a N-type Semiconductor. Semiconductors like Si doped with electron detect or electron rich impurities are called p – type semiconductors.
Updated: November 25, 2021 — 11:54 pm

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